IRFHM8330PBF 1 www.irf.com ? 2013 international rectifier june 4, 2013 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFHM8330PBF pqfn 3.3 mm x 3.3 mm tape and reel 4000 irfhm8330trpbf v dss 30 v r ds(on) max (@ v gs = 10v) 6.6 ? (@ v gs = 4.5v) 9.9 qg (typical) 9.3 ? nc i d (@t c (bottom) = 25c) 25 ? a m ??? v gs max 20 v features benefits low thermal resistance to pcb (<3.8c/w) enable better thermal dissipation low profile (<1.2mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existing surface mount techniques ?? easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, consumer qualification increased reliability notes ? through ? are on page 9 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 16 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 55 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 35 ?? i dm pulsed drain current 210 ? p d @t a = 25c power dissipation ? 2.7 w p d @t c(bottom) = 25c power dissipation 33 linear derating factor 0.021 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t a = 70c continuous drain current, v gs @ 10v 13 i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 25 ? applications ?? charge and discharge switch for notebook pc battery application ?? system/load switch ?? control mosfet for synchronous buck converter ? 3 2 1 8 7 6 5 4 d d d d s s s g top view pqfn 3.3x3.3 mm ? s g s s d d d d d
? IRFHM8330PBF 2 www.irf.com ? 2013 international rectifier june 4, 2013 ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 3.8 r ? jc (top) junction-to-case ? ??? 42 c/w r ? ja junction-to-ambient ? ? ??? 47 r ? ja (<10s) junction-to-ambient ? ??? 32 thermal resistance avalanche characteristics parameter typ. max. units e as single pulse avalanche energy ? ??? 42 mj d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 23 ??? mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 5.3 6.6 m ? v gs = 10v, i d = 20a ? ??? 7.7 9.9 v gs = 4.5v, i d = 16a ? v gs(th) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 25a ? v gs(th) gate threshold voltage coefficient ??? -6.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 61 ??? ??? s v ds = 10v, i d = 20a q g total gate charge ??? 20 ??? nc v gs = 10v, v ds = 15v, i d = 20a q g total gate charge ??? 9.3 14 q gs1 pre-vth gate-to-source charge ??? 2.7 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 2.5 ??? ? i d = 20a q godr gate charge overdrive ??? 2.5 ??? ? q sw switch charge (q gs2 + q gd ) ??? 4.1 ??? ? q oss output charge ??? 7.1 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.8 ??? ? ? t d(on) turn-on delay time ??? 9.2 ??? v dd = 15v, v gs = 4.5v t r rise time ??? 15 ??? ns i d = 20a t d(off) turn-off delay time ??? 10 ??? ? r g =1.8 ? t f fall time ??? 5.7 ??? ? c iss input capacitance ??? 1450 ??? v gs = 0v c oss output capacitance ??? 250 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 110 ??? ? ? = 1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 25 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 210 ? integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ??? 14 21 ns t j = 25c, i f = 20a, v dd = 15v q rr reverse recovery charge ??? 23 35 nc di/dt = 390a/s ?
? IRFHM8330PBF 3 www.irf.com ? 2013 international rectifier june 4, 2013 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v fig 2. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v
? IRFHM8330PBF 4 www.irf.com ? 2013 international rectifier june 4, 2013 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a fig 8. maximum safe operating area fig 11. maximum effective transient thermal impedance, junction-to-case 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology ? fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature fig 10. drain-to?source breakdown voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package
? IRFHM8330PBF 5 www.irf.com ? 2013 international rectifier june 4, 2013 0 5 10 15 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c fig 12. on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: pu lse current vs. pulse width 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.0a 8.5a bottom 20a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? IRFHM8330PBF 6 www.irf.com ? 2013 international rectifier june 4, 2013 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms fig 17a. switching time test circuit fig 17b. switching time waveforms vdd ? fig 18a. gate charge test circuit
? IRFHM8330PBF 7 www.irf.com ? 2013 international rectifier june 4, 2013 the typical application topology for this product is the synchronous buck converter. thes e converters operate at high frequencies (typically around 400 khz). during turn-on and turn-o ff switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit induce high vo ltage ringing which may exceed the device rating and lead to undesirable effects. one of the major contributors to the incr ease in parasitics is the pc b power circuit inductance. this section introduces a simple guideline that mitigates the e ffect of these parasitics on t he performance of the circuit and provides reliable operation of the devices. to reduce high frequency switching noise and the effects of electromagnetic interference (emi) when the control mosfet (q1) is turned on, the layout shown in figur e 19 is recommended. the input bypass capacitors, control mosfet and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the amplitude of the switch node ringing, and minimizes expos ure of the mosfets to repet itive avalanche conditions. when the synchronous mosfet (q2) is turned on, high aver age dc current flows through t he path indicated in figure 19. therefore, the q2 turn-on path should be laid out with a tight loop and wide traces at both ends of the inductor to minimize loop resistance. fig 19. placement and layout guidelines placement and layout guidelines
? IRFHM8330PBF 8 www.irf.com ? 2013 international rectifier june 4, 2013 for more information on board mounting, including footprin t and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3mm x 3.3mm outline package details pqfn 3.3mm x 3.3mm outline part marking
? IRFHM8330PBF 9 www.irf.com ? 2013 international rectifier june 4, 2013 qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ?? ) rohs compliant yes consumer (per jedec jesd47f ?? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 3.3mm x 3.3mm outline tape and reel ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standar d at the time of product release. notes: ? ? starting t j = 25c, l = 0.21mh, r g = 50 ? , i as = 20a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 25a by source bonding technology. ? pulse drain current is limited by source bonding technology. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ camber not e: 1. dimension measured on the bottom of the cavity. 2. pitch tolerance over any 10 pitches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square inch 5. roll should contain splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform supplier specification) ps the camber shall not exceed in 1mm/250
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